#2D NPN Vertical Bipolar Transistor
line x loc= 4.0<um> tag=SubTop spacing=0.005<um>
line x loc= 5.0<um> spacing=0.005<um>
line x loc= 6.0<um> tag=SubBottom spacing=0 .02<um>
line y loc= 0.0<um> tag=SubLeft spacing=0.02<um>
line y loc=18.0<um> spacing=0.02<um>
line y loc=30.0<um> tag=SubRight spacing=0 .02<um>
#Global Mesh Settings for automatic meshing in newly generated layers
mgoals normal. growth.ratio=1.1 accuracy=2e-5 min. normal. size=50<nm> max. lateral. size=6.0<um>
#Define layout masks
#(Note: n-type emitter is also used as contact to collector.)
#Masks are listed in the order thay are used
#Mask for front end process ing
mask name=Sinker segments= {-1 22 24 35} negative
mask name=Base segments= {-1 1.5 13 35} negative
mask name=Emitter segments= {-1 2.5 8 22 24 35} negative
#Mask for back end processing
mask name=Contact segments= {-1 3.5 7 10 12 22.5 23.5 35}
mask name=Metal segments= {-1 2 8 9 13 22 24 35} negative
region Silicon xlo=SubTop xhi=SubBottom ylo=SubLeft yhi=SubRight
init concentration=1e+15<cm-3> field=Boron
##graphics on cmd="plot.2d grid"
#Buried layer
deposit material= {0xide} type= isotropic time=1 rate= {0. 025}
implant Antimony dose=1.5e+15<cm-2> energy=100<keV>
etch material= {0xide} type=anisotropic time=1 rate= {0.03}
#Epi layer
deposit material= {Silicon} type=isotropic time=1 rate= {4.0} Arsenic concentration=1e+15<cm-3>
diffuse temp=1100<C> time=60<min>
#Show the final profiles
SetPlxList {BTotal SbTotal AsTotal PTotal}
WritePlx n@node@_ Buried.plx y=5.0
#Sinker (beginning of 2D problem)
deposit material= {0xide} type=isotropic time=1 rate= {0. 05}
photo mask=Sinker thickness=1
implant Phosphorus dose=5e+15<cm-2> ene rgy=200<keV>
strip Resist
diffuse temp=1100<C> time=5<hr>
struct tdr=n@node@_ vert_ npn1
#Base (refine the mesh in the base region before the base implant)
refinebox clear
refinebox Silicon min= {0 0.2} max= {1.5 14.4} xrefine= {0.1 0.1 0.2} yrefine= {0.1 0.2 0.1} add
refinebox remesh
photo mask=Base thickness=1
implant Boron dose=1e+14<cm-2> energy=50<keV>
strip Resist
diffuse temp=1100<C> time=35<min>
struct tdr=n@node@_ vert_ npn2
#Emitter (refine the mesh in the emitter region before the emitter implant)
photo mask=Emitter thickness=1
implant Arsenic dose=5e+15<cm-2> energy=55<keV> tilt=7 rotation=0
strip Resist
diffuse temp=1100<C> time=25<min>
struct tdr=n@node@_ vert_ npn3
#Show the final profiles
SetPlxList {BTotal SbTotal AsTotal PTotal}
WritePlx n@node@_ Final.plx y=5.0
WritePlx n@node@_ Sinker.plx y=23.0
#Back end
etch material= {0xide} type=isotropic time=1 rate= {0. 055} mask=Contact
#Reset the mgoals params to lower the mesh requirements above the silicon .
mgoals on normal. growth. ratio=20.0 accuracy=2e-5 min. normal. size=300<nm> max. lateral. size=0.7<um>
deposit material= {Aluminum} type=isotropic time=1 rate= {1.0}
etch material= {ALuminum} type=anisotropic time=1 rate= {1.1} mask=Metal
struct tdr=n@node@_ _vert_ _npn4
##add contact device simulation
contact name=" emitter" box Aluminum adjacent. material=Gas ylo=3 yhi=7 xlo=-1.2 xhi=-0.6
contact name=" base" box Aluminum adj acent . material=Gas ylo=10 yhi=12 xlo=-1.2 xhi=-0.6
contact name= "collector" box Aluminum adj acent . material=Gas ylo=22.5 yhi=23.5 xlo=-1.2 xhi=-0.6 add
struct tdr=n@node@_ vert_ npn5
exit