I think the reason is when there is a large pulse, it will be coupled to the gate of the ggnmos and there will be current flow through the res between g and s , then settles up a voltage Vgs to decrease the breakdown voltage of the ggnos. So the discharge will be more effective.
I think the reason is when there is a large pulse, it will be coupled to the gate of the ggnmos and there will be current flow through the res between g and s , then settles up a voltage Vgs to decrease the breakdown voltage of the ggnos. So the discharge will be more effective.
I think the reason is when there is a large pulse, it will be coupled to the gate of the ggnmos and there will be current flow through the res between g and s , then settles up a voltage Vgs to decrease the breakdown voltage of the ggnos. So the discharge will be more effective.
True, or more specifically, the resistor build up a voltage drop instantaneously so that the the built-in current/discharge path, usually a diode-connected MOS or PNPN works first, and hence protects the other circuits.