Resistance in CMOS Process

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Alles Gute

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In a CMOS process, normally we have many different implementation for a resistor. Like Npoly, Ppoly, Nwell, Nactive,Pative etc.
What's the difference betweeen these implementations and how to choose?
 

main differences are with respect to sheet resistance, temperature coefficient and susceptibility to mismatch.

For ex: Nwell has much higher sheet resistance than poly but has worse tempco.

So it depends on what application we are using the resistor.
 

If for mismatch, which is better? Can u recommand some literature?
 

For mismatch, poly resistor is better.
 

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