OMEsystem
Advanced Member level 4
If the device breakdown voltage is limited within 1.8V. That means
if the Vg-Vs, and Vg-Vd >1.8V, the gate oxide will be in breakdown.
My question is do we need to care Vg-Vsub, the gate-substrate voltage? Is it ok if
the Gate-Sub voltage is higher than breakdown voltage?
if the Vg-Vs, and Vg-Vd >1.8V, the gate oxide will be in breakdown.
My question is do we need to care Vg-Vsub, the gate-substrate voltage? Is it ok if
the Gate-Sub voltage is higher than breakdown voltage?