Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

[Question] Device reliability issue

Status
Not open for further replies.

OMEsystem

Advanced Member level 4
Joined
Dec 1, 2005
Messages
102
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,296
Activity points
2,061
I have one question, Can 1V devices, 0.13um cmos, sustain 3V swing in
transient in system start-up time? Does it cause reliability problem?
 

I guess it is best to read some oxide breakdown paper for the answer
 

I dont think it will work,the general rule of thumb

may be considered as 20% of nominal supply +nominal supply leads to device break down
 

i think 1-V device cannot sustain 3V swing. i accept that 1V device might have higher oxide breakdown than applying a field of 3V. but it might be restricted to 1V because lot of other effects such as Hot electron effect so on.
 

in our design we usually allowsome suspitious power glitch to be 20% more than the device spec for limited time, for example 20ns, I think from system design, the high swing should be overcomed through certain circuit techniques instead of exposing it to the low voltage devices.
 

Status
Not open for further replies.

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top