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i think 1-V device cannot sustain 3V swing. i accept that 1V device might have higher oxide breakdown than applying a field of 3V. but it might be restricted to 1V because lot of other effects such as Hot electron effect so on.
in our design we usually allowsome suspitious power glitch to be 20% more than the device spec for limited time, for example 20ns, I think from system design, the high swing should be overcomed through certain circuit techniques instead of exposing it to the low voltage devices.
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