bibo1978
Full Member level 4
Have anyone used samsung DDR-model with Modelsim, it seems that I have a problem with it, the DQS signal on the write process goes to X state, I believe that the DDR-model and controller tries to force a value on the DQS, I don't know for sure where is the problem,
however, I am using Modelsim 5.5e PLUS to do the simulation because the controller design is in VHDL.
I had verified the design with the micron model but the micron model doesn't support the tDQSS time parameter so I tried the samsung model.
There is another problem with the samsung model as well:
always a tCKmax violation occurs although my testbench runs at tCK less than tCK max, a tRASmax violation occurs also, although I refresh every 15.6 us so there is no way I will exceed tRAS max.
can anybody help me, I believe that there is a Denali model that can verify a controller with any ddr. can anyone help me to find this model
however, I am using Modelsim 5.5e PLUS to do the simulation because the controller design is in VHDL.
I had verified the design with the micron model but the micron model doesn't support the tDQSS time parameter so I tried the samsung model.
There is another problem with the samsung model as well:
always a tCKmax violation occurs although my testbench runs at tCK less than tCK max, a tRASmax violation occurs also, although I refresh every 15.6 us so there is no way I will exceed tRAS max.
can anybody help me, I believe that there is a Denali model that can verify a controller with any ddr. can anyone help me to find this model