Polarization MOSFET SOI

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lufer17

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Hello everyone, I have a question about the N channel MOSFET SOI N, how is the device bulk polarized?


 

P- to intrinsic, depending on the desired VT. Either a
desirable starting material doping, or VT adjust implants.
 

Questions:

1. What do you mean under "polarized" - applied voltage, or doping type? (I think, you mean the former).
2. What do you mean under "bulk" - body of SOI MOSFET, or substrate region under BOX?
3. is this FDSOI or PDSOI? (i.e., fully depleted or partially depleted?).
 


1- yes applied voltage
2-region of the substrate where is the VG2.
3-FDSOI

Objective: use as amplifier
 

Applied voltage varies with technology and application environment.
Ground (or negative rail) is common, but SOI technologies meant for
space and other radiation environments may apply a more negative
potential (which might then risk turning on the PMOS back channel,
there's a "BOX bias box").
 

In FDSOI technologies, adaptive back bias (voltage applied to substrate or well under BOX) is a popular and common technique to control leakage vs performance tradeoff.
Positive voltage will lower Vt for nMOSFET, and increase its ON current.
When device / block goes to off state, bias can be zero or negative.

See, for example, here:

http://semiengineering.com/the-return-of-body-biasing/

or here:

**broken link removed**
 

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