PN junction depletion width

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kenambo

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Hi all

what will happen my forward applied bias voltage reaches or exceeds the built-in potential..

Is it possible to entirely vanish the depletion region in a diode?

according to equation barrier voltage = q(Vbi-Vapplied)

if vbi=Vapplied barrier = 0V

am i right?
 

Yes, once you inject forward current there is no depletion
anymore. There are carriers moving through where it used
to be.
 


Vbi = Vt*ln(Na*Nd/ni²)=
= Built-in Potential Barrier .... Vbi≠0
Va = Applied forward bias voltage
 

So the immobile charge carriers of p-side and n-side got their respective holes and electrons when we apply a sufficient forward voltage.

is it correct?
 

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