ams_ei
Junior Member level 1
Hi,
I have understood that if the Vds of an NMOS is greater than overdrive voltage, the NMOS channel will be pinched off. If we increase the value of Vds, the channel will be more pinched off towards source and hence, the effective channel length will be reduced.
My question is:
If the channel is pinched off, how can the electrons from from source to drain for an NMOS? Is it due to the tunneling effect?
Thank you.
I have understood that if the Vds of an NMOS is greater than overdrive voltage, the NMOS channel will be pinched off. If we increase the value of Vds, the channel will be more pinched off towards source and hence, the effective channel length will be reduced.
My question is:
If the channel is pinched off, how can the electrons from from source to drain for an NMOS? Is it due to the tunneling effect?
Thank you.