matt09
Newbie level 4
Hi All,
I have been set a task by my mentor which is the following:
Consider a transimpedance amplifier (https://en.wikipedia.org/wiki/Transimpedance_amplifier).
This should be a real (non-ideal) operational amplifier, such as the OPA627: (https://www.ti.com/lit/ds/symlink/opa627.pdf).
Contrast the design challenges of designing this circuit to amplify the signals from a silicon photodiode S1133-01
(https://www.hamamatsu.com/resources/pdf/ssd/s1087_etc_kspd1039e.pdf)
compared to a P10090-01 InAs photodiode
(https://www.hamamatsu.com/resources/pdf/ssd/p10090-01_etc_kird1099e.pdf)
You should consider at the equivalent circuit of a photodiode attached to the non-ideal amplifier and consider amplifier performance in relation to the shunt resistance of each photodiode in the two cases. Is anything else important?
So far I have
So far I have determined the following problems identified:
Feedback factor / capacitance of opamp input and sensor putting stain on opamp to compensate
High required GBP required due to preference for high gain / large value of Rf. This limits sensitivity
Johnson noise (ij) from low shunt resistance for the InAs which changes with temperature
Dark noise current from visible light on InAS?
Shunt resistance drastically changes with temperature for both sensors but worse with the S1133-01
Mainly from
**broken link removed**
Page 11-16, page 22-23
If anyone can help further I'd really appreciate it! :razz:
I have been set a task by my mentor which is the following:
Consider a transimpedance amplifier (https://en.wikipedia.org/wiki/Transimpedance_amplifier).
This should be a real (non-ideal) operational amplifier, such as the OPA627: (https://www.ti.com/lit/ds/symlink/opa627.pdf).
Contrast the design challenges of designing this circuit to amplify the signals from a silicon photodiode S1133-01
(https://www.hamamatsu.com/resources/pdf/ssd/s1087_etc_kspd1039e.pdf)
compared to a P10090-01 InAs photodiode
(https://www.hamamatsu.com/resources/pdf/ssd/p10090-01_etc_kird1099e.pdf)
You should consider at the equivalent circuit of a photodiode attached to the non-ideal amplifier and consider amplifier performance in relation to the shunt resistance of each photodiode in the two cases. Is anything else important?
So far I have
So far I have determined the following problems identified:
Feedback factor / capacitance of opamp input and sensor putting stain on opamp to compensate
High required GBP required due to preference for high gain / large value of Rf. This limits sensitivity
Johnson noise (ij) from low shunt resistance for the InAs which changes with temperature
Dark noise current from visible light on InAS?
Shunt resistance drastically changes with temperature for both sensors but worse with the S1133-01
Mainly from
**broken link removed**
Page 11-16, page 22-23
If anyone can help further I'd really appreciate it! :razz: