non-idealistic on saturation region

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rock888ford

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what is the non-idealistic on saturation region?how do u improve it?
 

non idealistic on saturation is the variation of drain current with change in Vds in the saturation region.... this can be improved by reducing variation in Vds or by biasing of MOSFET using current mirror...
 

Non idealistic on saturation region--
Means Variation of device current due to "Channel length modulation".
Ideally device current in saturation must be constant showing straight line, but because of Channel Length modulation effect current varies with Vds.
Channel length modulation is also present while device operating in triode region, but the effect is less compared to in saturation state.
We can reduce the effect by biasing device near VDSAT point, so that Id variations will be against Vds.
 

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