How are the gate wired laid, can you twist gate and emitter together and shorten the length between gate driver and IGBT gate terminal or can directly mount on IGBT terminals if possible.
Is there any capacitor between gate and emitter,or Rg very large.Also there seems one notch while the voltage is rising below the full gate drive voltage. To me it seems the stray inductance ringing with gate capacitance.
You need to re-design Rg value considering oscillation damping.