wujue123
Newbie level 1
Hi,
I am trying to analysis the I-V curves differences before and after I involve traps into HfO2 of nmosfet. The nmos has 30nm channel length and High-K material (HfO2). But I can not find the difference. I think the code I used to input traps did not work. Is anyone familiar with this issue. Any example of traps simulation is also helpful. Thank you.
I am trying to analysis the I-V curves differences before and after I involve traps into HfO2 of nmosfet. The nmos has 30nm channel length and High-K material (HfO2). But I can not find the difference. I think the code I used to input traps did not work. Is anyone familiar with this issue. Any example of traps simulation is also helpful. Thank you.