May I ask for NMOS gate driving method with isolation using IR2110 and IR2117?
For IR2110, without low side MOSFET, the bootstrap capacitor cannot be charged. How can i solve the problem on driving isolation NMOS with high side driver only?
Second, can I use IR2117 directly to achieve my goal? Does the bootstrap capacitor charging problem still exists?
it´s hard to answer as long as we don´t know your circuit, voltages, frequency, duty cycle....
i suppose it is only high side mosfet. Can´t you go to low side mosfet?
galvanic isolation with optocouplers?
Can yo give us more information about your circuit?
However, for a more complete answer/discussion, you should mention your specifications such as frequency, duty cycle, etc.
If you have a sufficient load in place, the bootstrap capacitor can charge. However, why not just put a low-side MOSFET and feed into LIN the signal of HIN inverted?