Re: MIM devices
What do you want to know?
MIM capacitors are formed by using one extra metal layer on a standard CMOS backend.This involves the deposition and patterning of the insulator dielectric on top of the bottom metal layer ( typically the last metal layer -1 ). An additional metal layer is deposited and patterned to form the top plate of the capacitor (only) and then the last layer of metal is formed as standard but connects by vias to both bottom and top metal layers of the MIM capacitor.
Because of the degree of control the fab has over these layers, the MIM capacitor can be very robust and reliable. Typical capacitance values are around 1-2 fF/um2 capacitance with Vbd >35V.
Some Foundry's offer a dual stack capacitor (2 extra metal layers) to provide 2x the capacitance per unit area and also improved linearity.