==========================================================================
Electrode {
{Name="gate" Voltage= 0 Material= "PolySi"
Voltage=(
!(
set t1p 0
for { set i 1 } { $i <= @cycles@ } { incr i } {
set t2p [expr $t1p + 1e-6]
set t3p [expr $t1p + (@dtp@*1e-3)]
set t4p [expr $t2p + (@dtp@*1e-3)]
set t1e [expr $t3p + 2.5e-3]
set t2e [expr $t1e + 1e-6]
set t3e [expr $t1e + (@dte@*1e-3)]
set t4e [expr $t2e + (@dte@*1e-3)]
puts " 0 at [format %0.6e $t1p], @Vgp@ at [format %0.6e $t2p], @Vgp@ at [format %0.6e $t3p], 0 at [format %0.6e $t4p],"
puts " 0 at [format %0.6e $t1e], @Vge@ at [format %0.6e $t2e], @Vge@ at [format %0.6e $t3e], 0 at [format %0.6e $t4e],"
set t1p [expr $t3e + 5e-3]
}
)!
)}
{Name="substrate" Voltage= 0}
{Name="drain" Voltage= 0}
{Name="source" Voltage= 0}
}
Physics {
eBarrierTunneling "Gateoxb_Substrate"
hBarrierTunneling "Gateoxb_Substrate"
eBarrierTunneling "Gateoxt_Polygate"
hBarrierTunneling "Gateoxt_Polygate"
}
Physics(Material="Silicon") {
Recombination(SRH(DopingDependence))
Mobility(DopingDependence HighFieldSaturation)
}
Physics(Material="NitrideAsSemiconductor") {
Traps(
(Donor Level EnergyMid= 2.5 FromConductionBand
Conc= 1e19
eXSection= 1e-13 hXSection= 1e-13
eBarrierTunneling(NonLocal= "Gateoxb_Substrate" NonLocal= "Gateoxt_Polygate")
hBarrierTunneling(NonLocal= "Gateoxb_Substrate" NonLocal= "Gateoxt_Polygate")
PooleFrenkel
TrapVolume= 1e-15
)
(Acceptor Level EnergyMid= 1.0 FromConductionBand
Conc= 1e19
eXSection= 1e-13 hXSection= 1e-13
eBarrierTunneling(NonLocal= "Gateoxb_Substrate" NonLocal= "Gateoxt_Polygate")
hBarrierTunneling(NonLocal= "Gateoxb_Substrate" NonLocal= "Gateoxt_Polygate")
PooleFrenkel
TrapVolume= 1e-15
)
)
}
=================================================================