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Why would you even try? There are better materials properties
to be had with GaN (for voltage), InP (for speed), and for the
most part cost still favors silicon.
That said, you could simply lay a dielectric over a lightly doped
N region between two heavily doped ones, and get at least a
depletion MOSFET (likely of poor quality and poor repeatability).
Making an enhancement MOSFET probably wants a P- region
and I'm not sure that's "on the table" in any mainstream GaAs
flow.
Well, that's the thing - hardly anyone but a kook would
even try (MESFETs / HEMTs do pretty much the same,
other than the insulating gate, with less Cgg) and thus
any TCAD file you might obtain (if that's the request) is
likely just a meshed-up kooky fantasy.
Have you asked your friend Mr. Google if such a thing
ever has existed in reality? He seems to have some
university papers for you. But that is not reality per se.
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