Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

MOSFET MODELL: Total Gate Charge effect

Status
Not open for further replies.

caledonia

Newbie level 6
Joined
Mar 14, 2012
Messages
11
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,281
Activity points
1,359
Hello


I would like to simulate a simple circuit with a current Mirror built with NMOS Transistors.
To test the linearity of the circuit accuratly I would like to take also the variation of the Gate capacity with the Voltage, called the Total charge effect, into account.

Have you any idea how this dependency can be expressed?

thank you!
 

To test the linearity of the circuit accuratly I would like to take also the variation of the Gate capacity with the Voltage ...

Mirror current linearity is a DC analysis result, any capacitances have no effect on current linearity -- they just play their role in AC or transient analyses.
 

Status
Not open for further replies.

Similar threads

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top