Anybody can tell me the difference between "monte carlo simulation", "corner simulation" and "PVT simulation"? Pls tell me what parameters they are varying?
Thanks.
1. monte carlo simulation is used to simulate the mismatch effect to the circuits.
Usually, the width, VT, R, and C are varied to see what happen to your circuits.
2. corner simulation means process variation simulation. It's part of PVT.
3. PVT simulation: P stands for process, V stands for voltage and T stands for temperature.
Proces corner:
TT, FF, SS, FS, SF for MOS
max, min, typ for passive devices like C&R&L.
temperature: room, high and low.
For corner simulation and PVT simulation, I think I know them already.
For monte carlo simulation, I was told it need the monte carlo model of the process.
I want to know that:
1. is monte carlo simulation for MOS transistors only? not applicable for bipolar transistors?
2. if I don't have the monte carlo model, what variables I should set? for the NMOS, PMOS, capacitor, resistor, ...?
the width, VT is for MOS, right?
R and C will be varied same as corner simulation, is it?
yibinhsieh said:
1. monte carlo simulation is used to simulate the mismatch effect to the circuits.
Usually, the width, VT, R, and C are varied to see what happen to your circuits.
2. corner simulation means process variation simulation. It's part of PVT.
3. PVT simulation: P stands for process, V stands for voltage and T stands for temperature.
Proces corner:
TT, FF, SS, FS, SF for MOS
max, min, typ for passive devices like C&R&L.
temperature: room, high and low.
Monte Carlo simu may be used for any circuit that can contain either MOS & bipolar.
If you don't have model you should vary the resistor, capacitor VTH ..
For corner simu, there is a variation of the transistor model & a variation of temperature and power supply, but in Monte Carlo you must fix your temperature & power supply and vary only the model of transistor.