Mar 13, 2006 #1 E electronics_kumar Advanced Member level 2 Joined Nov 29, 2004 Messages 657 Helped 34 Reputation 68 Reaction score 9 Trophy points 1,298 Location Tamilnadu Activity points 5,552 FOR instrinsic semiconductor, what is the mobility of electron a)300 b)1200 c)1800 i got this during a test
FOR instrinsic semiconductor, what is the mobility of electron a)300 b)1200 c)1800 i got this during a test
Mar 13, 2006 #2 C ceaser Advanced Member level 4 Joined Dec 26, 2005 Messages 110 Helped 13 Reputation 26 Reaction score 5 Trophy points 1,298 Location Egypt Activity points 2,682 the mobility of holes is larger than the mobility of electrons the mobility of Holes is in first line (µh) the mobility of electrons is in second line (µe) interinsic mobility dimension (cm2/V.s) Ge \ Si \ GaAs 3900 \ 1500 \ 8600 1900 \ 450 \ 400
the mobility of holes is larger than the mobility of electrons the mobility of Holes is in first line (µh) the mobility of electrons is in second line (µe) interinsic mobility dimension (cm2/V.s) Ge \ Si \ GaAs 3900 \ 1500 \ 8600 1900 \ 450 \ 400