Measurement of Ron of MOSFET

[pk_]

Hi All,

I am setting VGS=VDD, VDS=0.2*VDD ( as Ron is the on resistance of MOSFET when device is in triode/linear region) and measuring "Ron" as Ron=VDS/Ids.
Is this approach fine enough to get the Ron value?


Thanks

 

[KlausST]

Hi,

https://lmgtfy.com/?q=mosfet+rds_on+measurement+method

All information available. The first hit is a detailed descriprion.

But nobody knows and nobody can tell you what "VDD" is.
Nobody knows whay you choose "VDS=0.2*VDD". It doesn´t make sense to me.

Klaus

 

[timof]

Yes, you apply max (nominal) voltage to the gate, Vgs, and small (usually 100 mV or 50 mV) voltage to the drain, Vds.
Rdson = Vds/Ids.

If you are doing it in simulation, you should not worry about self-heating.
If you are doing measurements, beware of self-heating that might affect Rdson device or even burn the device (use pulsed measurements).