melkord
Full Member level 3
One of the equations that describe my circuit has the term \mu_{0}*C_{ox}*W/L.
I found out in Cadence that ID in saturation follow exactly this equation:
ID = 0.5 * beff * vgt^2.
So I assume beff = \mu_{0}*C_{ox}*W/L.
Now, I want to characterize beff of the device by using gm/Id method that I have been using.
For the device parameter extraction, I varied L and VGS.
So far, this work just fine to predict gm, rds, fT.
However, I tried to record the beff using the same method, but I got the wrong result.
What would you suggest me to do?
I appreciate any lead.
I found out in Cadence that ID in saturation follow exactly this equation:
ID = 0.5 * beff * vgt^2.
So I assume beff = \mu_{0}*C_{ox}*W/L.
Now, I want to characterize beff of the device by using gm/Id method that I have been using.
For the device parameter extraction, I varied L and VGS.
So far, this work just fine to predict gm, rds, fT.
However, I tried to record the beff using the same method, but I got the wrong result.
What would you suggest me to do?
I appreciate any lead.