e.Horus
Junior Member level 3
Hello all,
Urgent question:
Given a grounded (1-port) integrated spiral inductor on Si substrate:
1. Which is the recommended connection: connecting the RF node to the outer turn of the inductor and ground the inner turn, or the RF node to the inner turn and ground the outer turn?
2. Which connection resuolts in higher Q?
3. Which connection results in higher resonance frequency (lower capacitance)?
∞ Thanks for your help
Cheers
Urgent question:
Given a grounded (1-port) integrated spiral inductor on Si substrate:
1. Which is the recommended connection: connecting the RF node to the outer turn of the inductor and ground the inner turn, or the RF node to the inner turn and ground the outer turn?
2. Which connection resuolts in higher Q?
3. Which connection results in higher resonance frequency (lower capacitance)?
∞ Thanks for your help
Cheers