In chip integrated decoupling capacitors

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strabush

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Is there any preference whether to use p-channel or n-channel MOSFETS as power supply decoupling capacitors?
 


I have used both, sometimes both at once, my primary
interest is what I can hide the bodies under (which bus
is local) and what the specific function wants decoupled
to/from. If you have a strong preference for the B/S/D
to be attached to power planes and the G to the point
of interest, the DC bias imposed by the return connection
and the p.o.i. will indicate what species of FET will be
properly biased there.

Attaching gate to power nets is often either a specific
no-no in ERCs, or just a way to get bit later on when
you're running antenna rules checks. So this may end
up forcing your hand.
 

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