zubair
Member level 1
This post is about impedance matching of Rf power transistor, these power transistor usually have low input/output impedance like z= 2.1 - j3.9,
The first question is that what is the usual practice for matching this low transistor impedance to standard 50 ohm, Is single stub matching is the only preferred choice for complex to real impedance transformation specifically in Rf power transistor applications or there is some other preferred option.
The second question is what if we required broad band matching, there exist some literature like
"An Introduction to Broadband Impedance Transformation for RF Power Amplifiers|" By Anthony J. Bichler
but it talk about lumped element matching. What if one has to do broadband matching using distributed elements like microstrip/stripline transmission lines.
Please give some reference(books or articles for both questions).
The first question is that what is the usual practice for matching this low transistor impedance to standard 50 ohm, Is single stub matching is the only preferred choice for complex to real impedance transformation specifically in Rf power transistor applications or there is some other preferred option.
The second question is what if we required broad band matching, there exist some literature like
"An Introduction to Broadband Impedance Transformation for RF Power Amplifiers|" By Anthony J. Bichler
but it talk about lumped element matching. What if one has to do broadband matching using distributed elements like microstrip/stripline transmission lines.
Please give some reference(books or articles for both questions).