Different GaN offerings have different degrees of difficulty
in driving. Cascode types like Transphorm get driven like
a MOSFET because they are a MOSFET under a depletion
mode GaN cascode FET. GaN Systems FETs are more gate-
overvoltage tolerant than EPC (like, you could drive them
with a 5V high current CMOS buffer - maybe even with a
paralleled AC series octal buffer, paralleled up (on the low
side - high side, you'll likely be more limited by available
GaN drivers' speed than the FETs)).
You don't say specifically what voltage rating (and I'm
not motivated to read the datasheet, which doesn't
say what -you- want, just what -it- is). Low voltage
power MOSFETs are "faster" and lower Cgg for a given
current. 1A is low end or sub-low-end for GaN FETs
I've seen listed.
Some idea of whether it's high side or low side switched
might help you get better answers about drivers.
10-100MHz is not a happy place for switching losses,
drivers or controllers. What's the upside, other than
maybe the hope of using an air core inductor (which
sounds cool, until EMI testing time)?