How to maintain ID constant by increasing VGS

[anjankumarkn]

What I have learnt so far is ID(Drain current) is a function of VGS(when the MOSFET is operating in active region). Is there any way to maintain ID constant by increasing VGS?

Thanks

 

[electronhole]

change the aspect ratio (W/L) of the MOSFET

 

[anjankumarkn]

Thank you very much!