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How to find UoCoX from winspice simulation?

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emaits

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Hi all,
Please help me!!!
How to find the UoCoX from the winspice simulation or TSMC model.
I have the following model:
.MODEL MODP PMOS ( LEVEL = 49
+VERSION = 3.1 TNOM = 27 TOX = 8.2E-9
+XJ = 1.5E-7 NCH = 1.7E17 VTH0 = -0.4620588
+K1 = 0.9361918 K2 = -0.0176335 K3 = 0
+K3B = 7.0070366 W0 = 1E-8 NLX = 3.686611E-9
+DVT0W = 0 DVT1W = 0 DVT2W = 0
+DVT0 = 0.7858918 DVT1 = 0.6254556 DVT2 = -0.3
+U0 = 118.7814043 UA = 1.143307E-9 UB = 5.271874E-21
+UC = -1E-10 VSAT = 1.073506E5 A0 = 0.8695045
+AGS = 0.1080859 B0 = 1.10047E-6 B1 = 5E-6
+KETA = 0.0130719 A1 = 8.279283E-3 A2 = 0.3
+RDSW = 3E3 PRWG = -0.0987856 PRWB = -0.1874643
+WR = 1 WINT = 4.915837E-8 LINT = 5.439976E-8
+DWG = -2.575699E-8 DWB = 1.522097E-8 VOFF = -0.0361606
+NFACTOR = 0.8753188 CIT = 0 CDSC = 2.4E-4
+CDSCD = 0 CDSCB = 0 ETA0 = 0.1877525
+ETAB = -0.2 DSUB = 1 PCLM = 1.5235775
+PDIBLC1 = 3.633434E-3 PDIBLC2 = 3.617068E-4 PDIBLCB = -0.1
+DROUT = 0.0680148 PSCBE1 = 4.769363E10 PSCBE2 = 5E-10
+PVAG = 0 DELTA = 0.01 RSH = 3
+MOBMOD = 1 PRT = 0 UTE = -1.5
+KT1 = -0.11 KT1L = 0 KT2 = 0.022
+UA1 = 4.31E-9 UB1 = -7.61E-18 UC1 = -5.6E-11
+AT = 3.3E4 WL = 0 WLN = 1
+WW = 0 WWN = 1 WWL = 0
+LL = 0 LLN = 1 LW = 0
+LWN = 1 LWL = 0 CAPMOD = 2
+XPART = 0.5 CGDO = 3.58E-10 CGSO = 3.58E-10
+CGBO = 1E-10 CJ = 8.331881E-4 PB = 0.7351912
+MJ = 0.3387901 CJSW = 8E-13 PBSW = 0.75
+MJSW = 0.91 CJSWG = 6.4E-11 PBSWG = 0.75
+MJSWG = 0.91 CF = 0 PVTH0 = 5.98016E-3
+PRDSW = 14.8598424 PK2 = 3.73981E-3 WKETA = -0.0166514
+LKETA = -0.0282038 )

any help will be greatly appreciated....
 

Re: How to find UoCoX from TSMC models?

how to find the uocox from the ... Tsmc model.
I have the following model:
Code:
.model modp pmos (                                level   = 49
+version = 3.1            tnom    = 27             [color="#ff0000"][b]tox     = 8.2e-9[/b][/color]
+xj      = 1.5e-7         nch     = 1.7e17         vth0    = -0.4620588
+k1      = 0.9361918      k2      = -0.0176335     k3      = 0
+k3b     = 7.0070366      w0      = 1e-8           nlx     = 3.686611e-9
+dvt0w   = 0              dvt1w   = 0              dvt2w   = 0
+dvt0    = 0.7858918      dvt1    = 0.6254556      dvt2    = -0.3
+[color="#ff0000"][b]u0      = 118.7814043[/b][/color]    ua      = 1.143307e-9    ub      = 5.271874e-21
...

µ0u0 ≈ 119 cm2/V*s

What you need is the gate-oxide capacitance per unit area
Cox = ε0 * εr(SiO2) / tox = 8.854e-12 F/m * 3.9 / 8.2e-9 m = 4.21e-3 F/m2 = 4.21 fF/(µm)2

Your above required UoCoX(pmos) ≡ µ0 * Cox = 119 cm2/V*s * 4.21 fF/(µm)2 ≈ 50 µA/V2

Probably a 0.35µm process ...
Due to different mobility u0 for nMOS (see your nmos model) you should get an nMOS transconductance factor UoCoX(nmos) ≈ 150 µA/V2 .
 
Dear Eric,
Thank you very much for your informative reply.
anyway, how you get the value ε0 * εr(SiO2) = 8.854e-12 F/m * 3.9 ?
could you please explain me!

Regards~
 

Dear Eric,
Thank you very much for your informative reply.
anyway, how you get the value ε0 * εr(SiO2) = 8.854e-12 F/m * 3.9 ?
could you please explain me!

Regards~

eps0 is the air dielectric constant and epsSiO2 is the dielectric constant of the silicon dioxide. They are physical quantities.

The u0 value that you have calculated in this way does not take into account mobility degeneration due to vertical and horizontal biasing, so expect that your transistors will have a lower beta (unCox*W/L) in operative conditions.
 

... how you get the value ε0 * εr(SiO2) = 8.854e-12 F/m * 3.9 ?
could you please explain me!

Cox is the process specific capacitance per area of the SiO2 gate. See here (scroll down to Capacitors): Capacitance/Area = C/A = ε0r / d

εr(SiO2) , the dielectric constant of SiO2 can be found in any book about MOS transistors, or e.g. here.

tox = silicon oxide (SiO2) thickness (process specific).
 

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