Probably a 0.35µm process ...
Due to different mobility u0 for nMOS (see your nmos model) you should get an nMOS transconductance factor UoCoX(nmos) ≈ 150 µA/V2 .
Dear Eric,
Thank you very much for your informative reply.
anyway, how you get the value ε0 * εr(SiO2) = 8.854e-12 F/m * 3.9 ?
could you please explain me!
Dear Eric,
Thank you very much for your informative reply.
anyway, how you get the value ε0 * εr(SiO2) = 8.854e-12 F/m * 3.9 ?
could you please explain me!
eps0 is the air dielectric constant and epsSiO2 is the dielectric constant of the silicon dioxide. They are physical quantities.
The u0 value that you have calculated in this way does not take into account mobility degeneration due to vertical and horizontal biasing, so expect that your transistors will have a lower beta (unCox*W/L) in operative conditions.