AeroHeX
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How is "10% reduction in drain current" criterion related to MOSFET failure rate?
Hi, all,
I am studying the MOSFET failure due to Hot-Carrier Injection, and saw this criterion mentioned in all kinds of papers, but none gives the reason.
Is the MOSFET just considered as "bad" or "not-working" once reached this 10% reduction in drain current? Or, is this 10% reduction in Id will cause a certain failure rate (like a three sigma point? or one sigma? or some other meaning?) Or, more specifically, if an NFET in a digital logic gate circuit reaches the 10% reduction in Id, the circuit should still work till real breakdown happens, right?
Thank you very much for your time and answer!
Hi, all,
I am studying the MOSFET failure due to Hot-Carrier Injection, and saw this criterion mentioned in all kinds of papers, but none gives the reason.
Is the MOSFET just considered as "bad" or "not-working" once reached this 10% reduction in drain current? Or, is this 10% reduction in Id will cause a certain failure rate (like a three sigma point? or one sigma? or some other meaning?) Or, more specifically, if an NFET in a digital logic gate circuit reaches the 10% reduction in Id, the circuit should still work till real breakdown happens, right?
Thank you very much for your time and answer!