boramm
Newbie
hello
I conducted a simulation to check the linearity between the drain and source when the general mosfet is on-state.
A simple circuit was constructed to apply power up to 40dBm. However, when the input power was 27dBm, the phenomenon of gain extension occurred.
From the results, should I see 27dBm as the MOSFET being broken down? Can i see the breakdown phenomenon in the simulation as well?
thank you
I conducted a simulation to check the linearity between the drain and source when the general mosfet is on-state.
A simple circuit was constructed to apply power up to 40dBm. However, when the input power was 27dBm, the phenomenon of gain extension occurred.
From the results, should I see 27dBm as the MOSFET being broken down? Can i see the breakdown phenomenon in the simulation as well?
thank you