triquent
Full Member level 3
hspice error effective channel length
I tried to simulate an inveter, but got some problems:
BSIM3 Fatal **error** Effective channel length <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
I am using level 49 model parameters. Anyone have idea how to fix it?
-----MY code----------------
.option scale=1u accurate post probe
.lib 'tsmc18dP' PMOS
.lib 'tsmc18dN' NMOS
vdd vdd! 0 1.2
vgnd gnd! 0 0
vin in 0 pwl 0 0 1ns 0 1.2ns 1.2 2ns 1.2
MN0 out in gnd! gnd! TSMC18dN W=270n L=180.0n M=1
MP0 out in vdd! vdd! TSMC18dP W=270n L=180.0n M=1
.tran 0.01ns 2ns
.probe v(in) v(out)
.end
------Hspice Output file with errors----------
*warning** both nodes of source 0:vgnd
are connected together
**warning** mosfet device 0:mmp0 cdsat is too small at temperature 25.000
value= 1.23453E-37,cdsat reset to epsmin
**warning** mosfet device 0:mmp0 cssat is too small at temperature 25.000
value= 1.23453E-37,cssat reset to epsmin
BSIM3 Fatal **error** Effective channel length <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel width <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel length <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel width <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel length for C-V <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel width for C-V <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
**warning** mosfet device 0:mmn1 cdsat is too small at temperature 25.000
value= 1.23453E-37,cdsat reset to epsmin
**warning** mosfet device 0:mmn1 cssat is too small at temperature 25.000
value= 1.23453E-37,cssat reset to epsmin
BSIM3 Fatal **error** Effective channel length <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel width <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel length <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel width <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel length for C-V <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel width for C-V <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
***** job aborted
1 ****** HSPICE -- V-2004.03 (20040116) 16:51:52 11/08/2005 solaris
******
************************************************************************
****** job statistics summary tnom= 25.000 temp= 25.000
I tried to simulate an inveter, but got some problems:
BSIM3 Fatal **error** Effective channel length <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
I am using level 49 model parameters. Anyone have idea how to fix it?
-----MY code----------------
.option scale=1u accurate post probe
.lib 'tsmc18dP' PMOS
.lib 'tsmc18dN' NMOS
vdd vdd! 0 1.2
vgnd gnd! 0 0
vin in 0 pwl 0 0 1ns 0 1.2ns 1.2 2ns 1.2
MN0 out in gnd! gnd! TSMC18dN W=270n L=180.0n M=1
MP0 out in vdd! vdd! TSMC18dP W=270n L=180.0n M=1
.tran 0.01ns 2ns
.probe v(in) v(out)
.end
------Hspice Output file with errors----------
*warning** both nodes of source 0:vgnd
are connected together
**warning** mosfet device 0:mmp0 cdsat is too small at temperature 25.000
value= 1.23453E-37,cdsat reset to epsmin
**warning** mosfet device 0:mmp0 cssat is too small at temperature 25.000
value= 1.23453E-37,cssat reset to epsmin
BSIM3 Fatal **error** Effective channel length <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel width <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel length <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel width <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel length for C-V <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel width for C-V <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
**warning** mosfet device 0:mmn1 cdsat is too small at temperature 25.000
value= 1.23453E-37,cdsat reset to epsmin
**warning** mosfet device 0:mmn1 cssat is too small at temperature 25.000
value= 1.23453E-37,cssat reset to epsmin
BSIM3 Fatal **error** Effective channel length <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel width <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel length <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel width <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel length for C-V <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
BSIM3 Fatal **error** Effective channel width for C-V <= 0
Device: W = -9.99973e-09, L = -1.99998e-08
***** job aborted
1 ****** HSPICE -- V-2004.03 (20040116) 16:51:52 11/08/2005 solaris
******
************************************************************************
****** job statistics summary tnom= 25.000 temp= 25.000