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Help on Pspice Simulation on IGBT Switching Characteristics

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samolangren

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Hello everyone,

Currently I am studying the switching characteristics of IGBT using Pspice simulation. I downloaded the spice model from manufacturer's website (for example, Infineon and International Rectifier) and used the same dynamic test circuit recommended by the product datasheet. I found many simulation results for switching loss (Eon and Eoff) are quite different with the datasheet values.

Anybody has the similar problem before?

Your advices are greatly appreciated,

samolangren
 

samolangren

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Re: Help on Pspice Simulation on IGBT Switching Characterist

Thanks for your suggestion. I will look into the parasitic capcitance first. In my pspice simulation, Eoff is almost two times as the value in datasheet due to the large "tail" current loss in switch off period, while Eon is much less than the datasheet value even considering the reverse recovery current loss, but they are still in same order.
 

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