cmosbjt
Full Member level 5
Requirement:
0. SiGe 0.18u process.
1. Supply voltage from 3 V to 6 V.
2. Output voltage 2.9 V.
3. Output current 30 mA.
4. Quiescent current less than 1 mA.
5. Load cap 0.1uF, 0201 ceramic cap (assuming no ESR or no good ESR control)
6. Settling time less than 2 uS for all conner, temperature conditions, target at 1 uS.
7. No requirement for PSRR so far.
I got trouble designing this LDO. The load cap is not big enough to put the load pole as dominant pole, but it is also not small enough to put it as the 2nd pole. The 0201 ceramic cap has no control on its ESR, which means no control on the zero for freq compensation. Output 2.9V, but supply voltage range changes from 3 to 6 V, which means the output impedance can be as small as 5 Ohm, or as big as 10k Ohm. The output pole changes dramatically. Quiescent current less than 1 mA, I can not use a supper big buffer to boost the PFET gate pole to very high freq.
Any idea how to design this LDO? Thanks.
0. SiGe 0.18u process.
1. Supply voltage from 3 V to 6 V.
2. Output voltage 2.9 V.
3. Output current 30 mA.
4. Quiescent current less than 1 mA.
5. Load cap 0.1uF, 0201 ceramic cap (assuming no ESR or no good ESR control)
6. Settling time less than 2 uS for all conner, temperature conditions, target at 1 uS.
7. No requirement for PSRR so far.
I got trouble designing this LDO. The load cap is not big enough to put the load pole as dominant pole, but it is also not small enough to put it as the 2nd pole. The 0201 ceramic cap has no control on its ESR, which means no control on the zero for freq compensation. Output 2.9V, but supply voltage range changes from 3 to 6 V, which means the output impedance can be as small as 5 Ohm, or as big as 10k Ohm. The output pole changes dramatically. Quiescent current less than 1 mA, I can not use a supper big buffer to boost the PFET gate pole to very high freq.
Any idea how to design this LDO? Thanks.