cml latch edaboard
High side of the clk/clkb can go up to Vdd, but you want to make sure your over drive (Vgs - Vt) isn't too high because then you may be in the region where the Ft & gm starts to drop off. So high side is determined at the voltage (Vgs - Vt) where Ft and gm starts to drop off or the value you can withstand. Your lowest level is determined by the resultant voltage on the clk/clkb transistor's source coupled node that will change the current of your current source. For example, if the voltage of the clk/clkb source coupled node is too low, your current source transistor (nmos) will no longer be in saturation. So that voltage will be determined by the VDSsat of your current source transistor or the resistor drop required for the current you need (if using a passive current source).
To get an estimation of gain, disconnect the cross-coupled latch transistors and calculate/simulate the gain of the diff pair.
For device size, your output pole is determined by 1/(2*pi*R*C). R is your load resistor, which is calculated by your swing divided by gate current. The C will be contribution of your Cgd of all transistors connected to that output plus the input capacitance of the next stage. You can optimize it to the bandwidth you are designing to. Once you know the current, look at the Ft vs. Id curves and pick a transistor whose Ft peaks at your gate current. You will probably have to optimized for your input pole later, if needed.