Try to be a little more specific about your design. Are
you talking something like an integrate POL buck where
you "own" all of the switches? Looking to use a NMOS
high side presumably, so need an over-the-rail charge
reservoir, do you have SOI or some HV elements that
can let it fly like it needs to? Figuring (for a 5V example)
your high side could see +11V if a lossless (sync) diode,
have you got components rated that high above the
substrate potential, if junction isolated?
I've seen (not done, but evaluated) an all NMOS buck
with sycnhronous bootstrap switch but that was all
an internal, proprietary boondoggle for a company I
no longer work for. On SOI. I know outfits like TI make
5V POLs with bootstrap high sides that work for them
(probably HV wells, and LDMOS either engineered or
opportunistic).
Papers will give you the start, but this kind of thing is
always about the hidden flaws / gotchas in the end.
Which management will never let you publish.