winglj
Full Member level 4
Hi, everyone. Do you have any experiences about biasing the pHEMT MMIC power amplifier at saturation mode?
I just thought that the pHEMT is similar to depletion JFET or MESFET, which requires negative bias. So the gate currents should be a very small number. However, for the power amplifer, if it works at near saturation point for maximum PAE, someone told me the gate currents would sink or source a few mA.
I am wondering how it happens? Do you have any recommendation references for how to apply active bias for pHEMT? Thanks.
I just thought that the pHEMT is similar to depletion JFET or MESFET, which requires negative bias. So the gate currents should be a very small number. However, for the power amplifer, if it works at near saturation point for maximum PAE, someone told me the gate currents would sink or source a few mA.
I am wondering how it happens? Do you have any recommendation references for how to apply active bias for pHEMT? Thanks.