raj_007
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Hi,
shallow trench isolation (STI) that cause the LOD effect, it increase the pmos driving strength and lower the nmos driving strength.
Please can anyone share the link related to above statement I am not getting cleared idea how it exactly.
Thanks
shallow trench isolation (STI) that cause the LOD effect, it increase the pmos driving strength and lower the nmos driving strength.
Please can anyone share the link related to above statement I am not getting cleared idea how it exactly.
Thanks