matbob
Full Member level 2
Hi everyone,
(all references to an N channel JFET)
The book: 'Solid State Electronics Devices' by Ben G. Streetman says that the depletion regions on both sides in a JFET MEET near the drain as the drain voltage is increased which essentially pinch off the channel(with gate voltage = 0).After this the drain current cannot increase and the electrons from the channel enter the electric field of the depletion region and flow to the drain contact.
Now, the famous book: 'Integrated Electronics: Analog and Digital Circuits and Systems' by Millman and Halkias says that it is not possible to completely pinch-off the channel (ie, the depletion regions cannot touch), since the drain current cannot go to zero which would result in the removal of the ohmic drop along the channel which is required for pinch-off. So a dynamic equilibrium is present.
Which one is right? Please help!
Also please tell me whether the depletion regions can touch when Vds=0 (drain to source voltage = 0) and gate voltage is increased to pinch-off voltage Vp.
(all references to an N channel JFET)
The book: 'Solid State Electronics Devices' by Ben G. Streetman says that the depletion regions on both sides in a JFET MEET near the drain as the drain voltage is increased which essentially pinch off the channel(with gate voltage = 0).After this the drain current cannot increase and the electrons from the channel enter the electric field of the depletion region and flow to the drain contact.
Now, the famous book: 'Integrated Electronics: Analog and Digital Circuits and Systems' by Millman and Halkias says that it is not possible to completely pinch-off the channel (ie, the depletion regions cannot touch), since the drain current cannot go to zero which would result in the removal of the ohmic drop along the channel which is required for pinch-off. So a dynamic equilibrium is present.
Which one is right? Please help!
Also please tell me whether the depletion regions can touch when Vds=0 (drain to source voltage = 0) and gate voltage is increased to pinch-off voltage Vp.