In general, the first has voltage gain close to one, lower output resistance, is able to sink and source high current, limited output voltage swing. The differnces the same as for common-source and common-drain amplifiers
In general, the first has voltage gain close to one, lower output resistance, is able to sink and source high current, limited output voltage swing. The differnces the same as for common-source and common-drain amplifiers
You would've been right if in the first circuit the top transistor was NMOS and the bottom one PMOS. But as I see from the circuit it is the other way around. So I tend to side with the previous post that says there's no difference.
In general, the first has voltage gain close to one, lower output resistance, is able to sink and source high current, limited output voltage swing. The differnces the same as for common-source and common-drain amplifiers
You would've been right if in the first circuit the top transistor was NMOS and the bottom one PMOS. But as I see from the circuit it is the other way around. So I tend to side with the previous post that says there's no difference.