Hi. This is a long story. Start by generating gm/ID charts for a single nmos transistor and the same for a pmos. You can set the VDS to a reasonable value (0.3 VDD - 0.5 VDD). Then sweep VGS as a primary variable from a value slightly less than Vth to (Vth + 0.5 V ) for example and "L" as parametric sweep. Then export your main parameters into excel or any other tool to draw them.
You should extract id, gm, vgs, gds. A sanity check for VGS sweep is that gm/ID range covers 5 S/A to 25 S/A.
Then you should plot all parameters vs gm/ID.
Now you have characterised your nmos and pmos devices and reached the state where you can start gm/ID design methodology.