Re: Difference between large signal and smal singal behaviou
k k i understand,.... the main parameters that i have come across in terms of MOS are Cgd,Cgs,Cox,Cbs,Cbd,r0,gm etc.... for example consider the Id vs Vds curve of a MOS... we bias the MOS at a particular point( i.e. Vgs value)... this point is usually taken in the saturation region if the circuit we are tryin is a amplifier... now consider a swing in Vgs then there will be a corresponding swing in Id and Vds....
here Id is given by Id=1/2kn(Vgs-Vt)² and for small variations of Vgs you can assume that Id directly proportional to Vgs (the limit upto which you call it small variation is decided by you based on the amount of violation to the assumption can be tolerated)
Now if the variation is large then Id is directly proportional to Vgs² and hence the amplification is non linear....
hope it is clear.... if you need anymore help.. post it....