Normally the thumb rule followed in the 0.6u technology for the difusion length of an NMOS transistor is 3um+gate length. What is the thumb rule for diffusion length in TSMC 0.18u?
I am new to drawing of layouts using the TSMC 0.18U CMOS 018 DEEP (6M, HV FET, S block). previously i had been using 0.6u technology. where can i find the design rules for this TSMC 0.18u.
The file you sent has three different technologies to use right. So for the library I am using i should be using DEEP technology right?
and I am new to the use of lambda scale so I am asking this. does
1 lambda in TSMC 0.18u CMOS018/DEEP (6M, HV FET, sblock) is equal to 0.09um?