Hi,
I was actually looking for the carrier lifetime (average time for the carriers to recombine which is inversely proportinal to the carrier recombination rate) of instrinsic semiconductors, not the minority carrier lifetime of doped semiconductors. In literature, I mostly found the term minority carrier lifetime, but in photoconductivity, you tend to prefer using high resistivity semiconductors, what happens then? Do you still consider it as doped material and use the term minority carrier life time? In this case I guess the carrier life time should be referred as photo-generated carrier life time. Please correct me if I'm wrong.
Many Thanks