Zarrin
Junior Member level 3
Hello everyone,
I want to know some materials about implementing capacitors in advanced VLSI circuits (below 100nm). First of all, which methods are used to implement capacitors? Based on what i found, currently, MOS capacitors, MIM (Metal-Insulator-Metal) and MOM (Metal-Oxide-Metal) are conventional methods for laying out capacitors. Which method is more prevalent than others? What is the range of variation?
Thanks
I want to know some materials about implementing capacitors in advanced VLSI circuits (below 100nm). First of all, which methods are used to implement capacitors? Based on what i found, currently, MOS capacitors, MIM (Metal-Insulator-Metal) and MOM (Metal-Oxide-Metal) are conventional methods for laying out capacitors. Which method is more prevalent than others? What is the range of variation?
Thanks