Hi, everybody...
Who can explain how determine a circuit robustness to the hot-electron degradation in spectre?
I'm interested in:
1) Which model parameters does describe hot-electron degradation? (e.g. in bsim3v3)
2) Which are simulation results required more attention?
3) What is the minimum age of circuit that usualy take as goal during simulation?
Thanks...
Did you check the properties of your transistor object in the simulation tool.In cadence ICFB I've found "Hot electron effect" as an option which on enabling the tool will take care of the rest of calculation...