[SOLVED] 250nm BiCMOS Pspice model

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dragonfury

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Hi all,
Can anyone share some parameters involved in 250nm BiCMOS process.Such as Vt0 , Cgd, Cgb, Cds etc of the NMOS and PMOS structure.
 

Find here published corresponding values for a 250nm process. Even if these values are derived from a pure bulk CMOS process, they won't be far from those of a BiCMOS process.
 
erikl said:
Find here published corresponding values for a 250nm process. Even if these values are derived from a pure bulk CMOS process, they won't be far from those of a BiCMOS process.
Click to expand...

your reply was helpful.I was wondering what is the LAMBDA: channel-length modulation coefficient (1/V) in the MOSIS parameters?
Regards
 

dragonfury said:
... what is the LAMBDA: channel-length modulation coefficient (1/V) in the MOSIS parameters?
Click to expand...
Possibly, but I can't imagine why they'd use it in this context.

In Level 1 MOS models LAMBDA was the CLM coefficient (1/Early_voltage), but as CLM calculation has become much more complex, a lot more parameters had to be used for the calculation of CLM and similar effects on Vth & IDS, like velocity saturation, VFMR & DIBL. In BSIM4 (Level 49 & 54) models the LAMBDA parameter has quite a different meaning (velocity overshoot coefficient).

You'd better ask MOSIS themselves for the LAMBDA meaning.
 

In this MOSIS document lambda "SCN5M_DEEP (lambda=0.12) ... SCN6M_SUBM (lambda=0.15)" refers to something like design grid, it's in micrometers and there is no relation to "lambda" as channel length modulation effect.

For this BSIM3 model, channel-length modulation coefficient should be PCLM parameter.
 
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    erikl

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the PCLM = 1.6166621 for 250 nm CMOS.isnt it large?
 

To be honest, I don't know exact relationship of PCLM coef to basic mosfet equation lambda param. You should do research in bsim3 docs for more detailed eplanation: **broken link removed**

During studies I made lambda parameter extraction from bsim3 model, I believe you can find some instructions for extraction with googles
 
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