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What is the difference between the technologies(280nm,130nm,65nm, etc...)?

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lohitha

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What is the difference between technologies(280nm,130nm,65nm, etc...)?

What is the difference between the technologies(280nm,130nm,65nm, etc...)?
if this represents the gate length size then in all technologies we can see a transistor with gate length 2nm.., provide yr answer with some justifctn points .
 

Semiconductor manufacturing processes
10 µm — 1971
3 µm — 1975
1.5 µm — 1982
1 µm — 1985
800 nm (.80 µm) — 1989
600 nm (.60 µm) — 1994
350 nm (.35 µm) — 1995
250 nm (.25 µm) — 1998
180 nm (.18 µm) — 1999
130 nm (.13 µm) — 2000
90 nm — 2002
65 nm — 2006
45 nm — 2008
32 nm — 2010
22 nm — 2012
14 nm — approx. 2013
10 nm — approx. 2015
7 nm — approx. 2020
5 nm — approx. 2022

These technologies refer to the scaling down w.r.t. years. As an instance, 130nm refers to Gate dimensions of 65nm, Gate dimensional accuarcies of 6.31 for 3sigma. The 2nm that you are stating is the Gate thickness for each of these technologies which has been invariably the same over the years.

To add to amazements, in 2010 an austrailian team made a transistor out of just 7 atoms using 4nm technology.

Sources: Wikipedia and paper on Semiconductor Process and Manufacturing Technologies for 90nm Process Generation by Takafumi Tokunaga.
 

Technology is gate length. Our fabrication technology is not mature enough to fabricate a device with 2nm. You also need to maintain same device characteristics with scaling.
 

The 2nm that you are stating is the Gate thickness for each of these technologies which has been invariably the same over the years.
Not quite correct: Gate thickness (tox) scales with the supply voltage:
With a 0.5µm process at VDD=5V tox≈14nm,
with a 0.35µm process at VDD=3.3V tox≈8nm,
with a 0.18µm process at VDD=1.8V tox≈4nm ...

in 2010 an austrailian team made a transistor out of just 7 atoms using 4nm technology.
More exactly: The MOSFET's channel would statistically contain 7 doping atoms.
 

Re: What is the difference between technologies(280nm,130nm,65nm, etc...)?

you are quoting a transistor and these nos in general denote the size they are made in micro to nano scale
 

"Technology node" refers to the metal1 half-pitch for the DRAM version of the process.
Typically, minimum (nominal) gate length is slightly smaller than the technology node.
For example, for 90nm process, minimum gate length is about 70-80 nm.
 

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