Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

Leakage Current for mosfet

Status
Not open for further replies.

zarric

Junior Member level 3
Joined
Nov 13, 2007
Messages
31
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,286
Activity points
1,487
the circuit shows below
98_1253672446.gif


when LVNMOS is off, simulation result shows that the voltage at point A is high than HVNMOS gate voltage and even exceed the breakdown voltage of LVNMOS.

whether the circuit works as simulation ??[/img]
 

Hello Zarric,
Yes, it really can happen. And it can also take place during ESD zap when capacitance coupling between HV and A strong enough. Also ever if HVNMOS is used instead of LVNMOS it won't solve an issue of this circuit because there is still a risk to damage gate-source oxide of top HVNMOS.
You have to remove this potential weakness of circuit in all places. The common practice is to clamp potential on node A:
1) To use zener, diode connected MOSFET (depends from expecting voltage on A) between A and GND.
2) To use PMOS, source to A, drain to GND, gate to LV.
 

    zarric

    Points: 2
    Helpful Answer Positive Rating
Status
Not open for further replies.

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top