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The device Performance is depends on source & drain area regions.
the device performance is Vt or Id is impacted byLOD effect.It is due to different mechanical stress induced by differnt od Regions.
These area r Represented by SA &SB in R&C extracted files.
SA & SB are the distance b/w the gate and the OD region.
SA & SB will affect the drain current of MOS.
LOD stands for length of OD (oxide definition). OD can be either source or drain.
SA & SB are the parameters that Represent area of source or drain region.
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